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IXTH 1N100
IXTT 1N100
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
TO-247 AD Outline
g fs
V DS = 20 V; I D = 1.0A, pulse test
0.8
1.5
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
480
45
pF
pF
1
2
3
C rss
t d(on)
15
18
pF
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 1A
19
ns
t d(off)
R G
= 18 ?, (External)
20
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
18
ns
Dim.
Millimeter
Inches
Q g(on)
23
nC
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
Q gs
Q gd
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 1A
4.5
14
nC
nC
2.2 2.54
2.2 2.6
b 1.0 1.4
.087 .102
.059 .098
.040 .055
b 1
1.65 2.13
.065 .084
R thJC
2.3
K/W
b 2
2.87 3.12
.113 .123
R thCK
TO-247
0.25
K/W
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
L1 4.50
?P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
I S
V GS = 0 V
1.5
A
I SM
V SD
t rr
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = I S , -di/dt = 100 A/ μ s, V R = 100 V
710
6
1.8
A
V
ns
TO-268 Outline
Dim.
Millimeter
Min.
Max.
A
4.9 5.1
A 1
2.7 2.9
A 2
.02 .25
b
1.15 1.45
b 2
1.9 2.1
C
.4 .65
D
13.80 14.00
E
15.85 16.05
13.3 13.6
E 1
e
5.45 BSC
H
18.70 19.10
L
2.40 2.70
L1
1.20 1.40
L2
1.00 1.15
L3
0.25 BSC
L4
3.80 4.10
Inches
Min.
Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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